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  Datasheet File OCR Text:
 MITSUBISHI RF POWER MODULE
M68742
SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
OUTLINE DRAWING
420.5 37 30 2-R1.5 +0.2 - 0.5 +0.8 0
Dimensions in mm
BLOCK DIAGRAM
2
3
1
4 5
1
2
3
4
5
61
0.45 0.15 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
9.61 14.71 27.41 32.41
ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50 f=903-905MHz, ZG=ZL=50 f=903-905MHz, ZG=ZL=50 f=903-905MHz, ZG=ZL=50 Ratings 13 5.5 10 5 -30 to +100 -40 to +100 Unit V V mW W C C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted)
Symbol f PO 2fO in T Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance Parameter Test conditions Limits Min 903 1.8 Max 905 -30 4 30 No parasitic oscillation No degradation or destroy Unit MHz W dBc % -
VDD=6V, VGG=5V, Pin=1mW, ZG=ZL=50 PO=1.8W(VGG=Adjust), VDD=6V, Pin=1mW, ZG=ZL=50 ZG=ZL=50, VDD=4.5-9.3V, Load VSWR <4:1 VDD=13V, Pin=1mW, PO=1.8W (VGG Adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. 97


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